US Patent Issued to Lawrence Livermore National Security, the United States of America as represented by the Secretary of the Army, BAE Systems Land & Armaments on May 20 for "Monolithic growth of epitaxial silicon devices via co-doping" (California, Alabama, Minnesota Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,086, issued on May 20, was assigned to Lawrence Livermore National Security LLC (Livermore, Calif.), the United States of America as represented by the Secretary of the Army (Huntsville, Ala.) and BAE Systems Land & Armaments LP (Sterling Heights, Mich.).

"Monolithic growth of epitaxial silicon devices via co-doping" was invented by Caitlin Anne Chapin (Fremont, Calif.), Lars F. Voss (Livermore, Calif.), Luis M. Hernandez (Coon Rapids, Minn.) and Mark Rader (Decatur, Ala.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one general embodiment, a structure includes a first diode, comprising: a first layer having a first type of dopant, and a second ...