ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,413, issued on Oct. 7, was assigned to L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris).
"Indium compound and method for forming indium-containing film using said indium compounds" was invented by Takashi Ono (Yokosuka, Japan) and Christian Dussarrat (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A process for forming an indium-containing film on at least part of the surface of a substrate, the process comprising (a) placing a substrate into a chamber; (b) introducing a vapor that includes an indium-containing compound into the chamber; (c) purging the chamber with a first purge gas; (d) introduc...