ALEXANDRIA, Va., July 30 -- United States Patent no. 12,371,787, issued on July 29, was assigned to L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris).

"Method of forming dielectric films, new precursors and their use in the semi-conductor manufacturing" was invented by Daehyeon Kim (Hwaseong-si, South Korea), Jooho Lee (Seoul, South Korea) and Wontae Noh (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Metal-containing film forming composition comprising a precursor having the formula: M(=NR1)(OR2)(OR3)mL. Wherein, M=V or Nb or Ta; R1-R3=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, c...