US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on March 11 for "Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material" (Japanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,247,319, issued on March 11, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material" was invented by Tadaaki Kaneko (Hyogo, Japan) and Kiyoshi Kojima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crys...