ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,038, issued on Aug. 26, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method" was invented by Tadaaki Kaneko (Sanda, Japan), Daichi Dojima (Sanda, Japan), Moeko Matsubara (Osaka, Japan) and Yoshitaka Nishio (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The purpose of the present is to provide a modified AlN source for suppressing downfall defects. This m...