US Patent Issued to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS on Aug. 5 for "Low pressure closed chamber method for forming chromium nitride thin film" (Saudi Arabia Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,378,658, issued on Aug. 5, was assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (Dhahran, Saudi Arabia).

"Low pressure closed chamber method for forming chromium nitride thin film" was invented by Khan Alam (Dhahran, Saudi Arabia), Muhammad Baseer Haider (Dhahran, Saudi Arabia), Khalil A. Ziq (Dhahran, Saudi Arabia) and Bakhtiar Ul Haq (Dhahran, Saudi Arabia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a chromium nitride (CrN) thin film is provided. The method includes reactive radio frequency magnetron sputtering chromium onto a substrate in the presence of a gaseous mixture including nitrogen and argon to form the CrN...