ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,830, issued on Sept. 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Semiconductor device with power via" was invented by Ruilong Xie (Niskayuna, N.Y.), Junli Wang Sr. (Slingerlands, N.Y.), Kisik Choi (Watervliet, N.Y.), Julien Frougier (Albany, N.Y.), Reinaldo Vega (Mahopac, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Albert M. Chu (Nashua, N.H.) and Brent A. Anderson (Jericho, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a field effect transistor (FET) including first and second source/drain (S/D) epitaxial regions. The semiconductor d...