US Patent Issued to International Business Machines on Sept. 23 for "Integration of stacked nanosheets and FINFET that overhangs a bottom spacer" (New York Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,355, issued on Sept. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Integration of stacked nanosheets and FINFET that overhangs a bottom spacer" was invented by Effendi Leobandung (Stormville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a first spacer located on top of a substrate, where the first spacer has a first width in a first axis of a nanodevice. At least one fin located on top of the first spacer, where the at least one fin has a second width in the first axis of the nanodevice. Where the second width is larger than the first width."

The patent was filed on Feb. 22, 2022...