US Patent Issued to International Business Machines on Oct. 28 for "Vertical transport field effect transistor (VTFET) with backside wraparound contact" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,793, issued on Oct. 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical transport field effect transistor (VTFET) with backside wraparound contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Brent A. Anderson (Jericho, Vt.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Reinaldo Vega (Mahopac, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical transport field effect transistor (VTFET) apparatus includes a fin-shaped channel structure; a gate stack that surrounds the channel structure; a top source/drain structure at a top...