US Patent Issued to International Business Machines on Oct. 21 for "Redundant bottom pad and sacrificial via contact for process induced RRAM forming" (New York, Washington, New Jersey Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,293, issued on Oct. 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Redundant bottom pad and sacrificial via contact for process induced RRAM forming" was invented by Youngseok Kim (Upper Saddle River, N.J.), Takashi Ando (Eastchester, N.Y.), Hiroyuki Miyazoe (White Plains, N.Y.), Soon-Cheon Seo (Glenmont, N.Y.) and Dexin Kong (Redmond, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory includes: a bottom electrode; a first contact on the bottom electrode; a switching material pad on the first contact, wherein the switching material pad includes an oxide and a plurality of current conducting filaments ...