US Patent Issued to International Business Machines on Nov. 4 for "Semiconductor device having hybrid middle of line contacts" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,813, issued on Nov. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor device having hybrid middle of line contacts" was invented by Ruilong Xie (Niskayuna, N.Y.), Su Chen Fan (Cohoes, N.Y.), Veeraraghavan S. Basker (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.) and Nicolas Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS (complementary metal-oxide semiconductor) device includes an n-channel metal-oxide semiconductor (NMOS) device, a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separate...