US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Nov. 25 for "Subtractive source drain contact for stacked devices" (New Hampshire, California, New York, Vermont Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,265, issued on Nov. 25, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Subtractive source drain contact for stacked devices" was invented by Heng Wu (Santa Clara, Calif.), Junli Wang (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Albert M. Young (Fishkill, N.Y.), Albert M. Chu (Nashua, N.H.), Brent A. Anderson (Jericho, Vt.) and Ravikumar Ramachandran (Pleasantville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor ("FET") stack, including a lower FET, and an upper FET, a first contact to a lower source drain of the lower FET, a first silicide between the first contact and the lower source d...