US Patent Issued to International Business Machines on Nov. 25 for "Source/drain contact at tight cell boundary" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,248, issued on Nov. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Source/drain contact at tight cell boundary" was invented by Ruilong Xie (Niskayuna, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Brent A. Anderson (Jericho, Vt.), Reinaldo Vega (Mahopac, N.Y.), Albert M. Chu (Nashua, N.H.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a semiconductor wafer having a first transistor and a second transistor; a first source/drain (S/D) contact of the first transi...