US Patent Issued to International Business Machines on Nov. 18 for "Etch back and film profile shaping of selective dielectric deposition" (California, New York Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,144, issued on Nov. 18, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Etch back and film profile shaping of selective dielectric deposition" was invented by Rudy J. Wojtecki (San Jose, Calif.), Son Nguyen (Schenectady, N.Y.), Balasubramanian S. Pranatharthiharan (Santa Clara, Calif.) and Cornelius Brown Peethala (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Self-aligned semiconductor device structures and techniques for fabrication thereof are provided. In one aspect, a self-aligned semiconductor device structure includes: at least one first conductive element embedded in a first dielectric; a second die...