US Patent Issued to International Business Machines on Nov. 11 for "Magnetic tunnel junction device with magnetoelectric assist" (Oregon, California, New York Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,497, issued on Nov. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magnetic tunnel junction device with magnetoelectric assist" was invented by Karthik Yogendra (Hillsboro, Ore.), Heng Wu (Guilderland, N.Y.), Saba Zare (White Plains, N.Y.) and Dimitri Houssameddine (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a magnetic tunnel junction (MTJ) stack, a first metal line above the MTJ stack and a magnetoelectric material layer above the first metal line. A semiconductor device including an array of magnetic tunnel junction (MTJ) stacks, a first metal line connected physica...