US Patent Issued to International Business Machines on Nov. 11 for "In-situ low temperature dielectric deposition and selective trim of phase change materials" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,293, issued on Nov. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"In-situ low temperature dielectric deposition and selective trim of phase change materials" was invented by Luxherta Buzi (Chappaqua, N.Y.), Hiroyuki Miyazoe (White Plains, N.Y.), Henry K. Utomo (Ridgefield, Conn.) and Matthew Peter Sagianis (Bayside, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a resistive semiconductor memory structure that provides in-situ selective etch of phase change materials during deposition of dielectric at low temperature (in the same chamber). The method provides, to a single processing chamber, a...