US Patent Issued to International Business Machines on June 24 for "Etching of magnetic tunnel junction (MTJ) stack for magnetoresistive random-access memory (MRAM)" (New York, South Carolina Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,726, issued on June 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Etching of magnetic tunnel junction (MTJ) stack for magnetoresistive random-access memory (MRAM)" was invented by Koichi Motoyama (Clifton Park, N.Y.), Oscar van der Straten (Guilderland Center, N.Y.), Joseph F. Maniscalco (Greenville, S.C.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A first set of spacers are formed on the sidewalls of a bottom electrode. A reference layer is formed on the spacers and the...