US Patent Issued to International Business Machines on June 10 for "Stacked FET SRAM" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,859, issued on June 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET SRAM" was invented by Ruilong Xie (Niskayuna, N.Y.), Carl Radens (LaGrangeville, N.Y.), Albert M. Chu (Nashua, N.H.), Brent A. Anderson (Jericho, Vt.), Junli Wang (Slingerlands, N.Y.), Julien Frougier (Albany, N.Y.) and Ravikumar Ramachandran (Pleasantville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided that includes at least one stacked FET device including two top transistors stacked over a single bottom transistor. The at least one stacked FET includes a full gate cut structure that is used to separat...