US Patent Issued to International Business Machines on July 8 for "Looped long channel field-effect transistor" (New York, Vermont Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,685, issued on July 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Looped long channel field-effect transistor" was invented by Ruilong Xie (Niskayuna, N.Y.), Ardasheir Rahman (Schenectady, N.Y.), Hemanth Jagannathan (Niskayuna, N.Y.), Robert Robison (Rexford, N.Y.), Brent Anderson (Jericho, Vt.) and Heng Wu (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A long channel field-effect transistor is incorporated in a semiconductor structure. A semiconductor fin forming a channel region is configured as a loop having an opening therein. A dielectric isolation region is within the opening. Source/drain regions ...