ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,711, issued on July 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Late gate extension" was invented by Ruilong Xie (Niskayuna, N.Y.), Christopher J Waskiewicz (Rexford, N.Y.), Jay William Strane (Warwick, N.Y.), Hemanth Jagannathan (Niskayuna, N.Y.) and Brent Anderson (Jericho, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "VFET devices having a robust gate extension structure using late gate extension patterning and self-aligned gate and source/drain region contacts are provided. In one aspect, a VFET device includes: at least one bottom source/drain region present on a substrate; at least one fin disposed on the at l...