US Patent Issued to International Business Machines on July 15 for "Upper and lower gate configurations of monolithic stacked FinFET transistors" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,990, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Upper and lower gate configurations of monolithic stacked FinFET transistors" was invented by Chen Zhang (Guilderland, N.Y.), Junli Wang (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Dechao Guo (Niskayuna, N.Y.) and Sung Dae Suk (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a FinFET fin. The same FinFET fin is associated with a bottom FinFET and a top FinFET. The FinFET fin includes a lower channel portion, associated with the bottom FinFET, a top channel portion, associated with the top FinFET, and...