US Patent Issued to International Business Machines on July 15 for "Reactive serial resistance reduction for magnetoresistive random-access memory devices" (New York, Connecticut Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,164, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reactive serial resistance reduction for magnetoresistive random-access memory devices" was invented by Matthias Georg Gottwald (Ridgefield, Conn.), Guohan Hu (Yorktown Heights, N.Y.), Stephen L. Brown (Carmel, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the condu...