US Patent Issued to International Business Machines on July 15 for "Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices" (New York, California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,977, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Dimitri Houssameddine (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor apparatus includes a substrate; a central vertical pillar of dielectric material protruding upward from the substrate; a left plurality of semiconductor fins protruding horizontally from a left side of the central vertical pillar above the substrate; a right p...