US Patent Issued to International Business Machines on July 15 for "Electrical memristive devices based on bilayer arrangements of HfO y and WO x" (Swiss Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,172, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Electrical memristive devices based on bilayer arrangements of HfO y and WO x" was invented by Bert Jan Offrein (Schoenenberg, Switzerland), Valeria Bragaglia (Thalwil, Switzerland), Folkert Horst (Wettingen, Switzerland), Antonio La Porta (Kilchberg, Switzerland), Roger F. Dangel (Zug, Switzerland) and Daniel S. Jubin (Langnau am Albis, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrical memristive device has a layer structure. The layer structure comprises two electrodes and a bilayer material arrangement that connects the two electr...