ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,767, issued on July 1, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).
"Stacked FET contact formation" was invented by Koichi Motoyama (Clifton Park, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Jennifer Church (Albany, N.Y.) and Oleg Gluschenkov (Tannersville, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of making the same include a first lower device and a second lower device on a substrate. A first upper device is over the first lower device and a second upper device is over the second lower device. A first lower contact extends from a height above the first upper device and makes electrical ...