US Patent Issued to International Business Machines on Feb. 4 for "Reducing contact resistance of phase change memory bridge cell" (New York Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,885, issued on Feb. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Reducing contact resistance of phase change memory bridge cell" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Zuoguang Liu (Schenectady, N.Y.) and Arthur Gasasira (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change memory includes a substrate, a plurality of first phase change elements on the substrate, a plurality of electrodes on the plurality of first phase change elements, and a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase chan...