US Patent Issued to International Business Machines on Feb. 10 for "Trench isolation for backside contact formation" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,390, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Trench isolation for backside contact formation" was invented by Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.) and Dureseti Chidambarrao (Weston, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a trench isolation between a first source/drain region of a first transistor and a second source/drain region of a second transistor, wherein the trench isolation includes an upper portion and a lower portion; the low...