US Patent Issued to International Business Machines on Feb. 10 for "Contact resistance of nanosheet transistor" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,385, issued on Feb. 10, was assigned to International Business Machines Corp..

"Contact resistance of nanosheet transistor" was invented by Shogo Mochizuki (Mechanicville, N.Y.), Su Chen Fan (Cohoes, N.Y.), Nicolas Jean Loubet (Guilderland, N.Y.) and Xuan Liu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor device. The semiconductor structure includes a plurality of nanosheet (NS) channel layers having a plurality of source/drain (S/D) regions on sidewalls thereof; and a continuous contact via being in direct contact with the plurality of S/D regions, wherein the continuous c...