US Patent Issued to International Business Machines on Dec. 23 for "Dielectric tuning of negative capacitance in dual channel field effect transistors" (New York, New Jersey Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,465, issued on Dec. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Dielectric tuning of negative capacitance in dual channel field effect transistors" was invented by Takashi Ando (Eastchester, N.Y.), Reinaldo Vega (Mahopac, N.Y.), Praneet Adusumilli (Somerset, N.J.) and Cheng Chi (Jersey City, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a semiconductor substrate; an NFET channel structure atop the substrate; a PFET channel structure atop the substrate; a first dielectric atop the PFET channel structure; a second dielectric atop the NFET channel structure; a shared internal metal ga...