US Patent Issued to International Business Machines on Aug. 26 for "Vertical-transport field-effect transistor with backside gate contact" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,960, issued on Aug. 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical-transport field-effect transistor with backside gate contact" was invented by Brent A. Anderson (Jericho, Vt.), Albert M. Chu (Nashua, N.H.), Ruilong Xie (Niskayuna, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.) and Reinaldo Vega (Mahopac, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A VTFET is on a wafer and a backside power delivery network is on a backside of the wafer. A first backside contact is connected to a gate of the VTFET and a first portion of the backside power delivery net...