ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,544, issued on Aug. 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Antenna assisted ReRAM formation" was invented by Youngseok Kim (Upper Saddle River, N.J.), Soon-Cheon Seo (Glenmont, N.Y.), Injo Ok (Loudonville, N.Y.) and Alexander Reznicek (Troy, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure comprises a ReRAM module embedded in a substrate. An insulative layer is formed on the substrate. A first electrode is located on the insulative layer. The first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area. A second electrode is located on the ins...