US Patent Issued to International Business Machines on Aug. 12 for "Filament-metal oxide channel exchange resistive memory device" (Swiss, French Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,815, issued on Aug. 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Filament-metal oxide channel exchange resistive memory device" was invented by Laura Begon-Lours (Paris), Valeria Bragaglia (Zurich), Jean Fompeyrine (Waedenswil, Switzerland), Antonio La Porta (Kilchberg, Switzerland) and Mattia Halter (Zurich).

According to the abstract* released by the U.S. Patent & Trademark Office: "An approach to provide a semiconductor structure for a resistive switch device. The resistive switch device includes a bottom electrode, a dielectric material over the bottom electrode, and a metal oxide material on a portion of the dielectric material connecting to a p...