US Patent Issued to INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES on July 1 for "Semiconductor material based on metal nanowires and porous nitride and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,343,711, issued on July 1, was assigned to INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor material based on metal nanowires and porous nitride and preparation method thereof" was invented by Lixia Zhao (Beijing), Jing Li (Beijing), Chao Yang (Beijing), Zhiguo Yu (Beijing), Xin Xi (Beijing) and Kaiyou Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer la...