US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 27 for "MRAM, method of manufacturing the same, and electronic device including the MRAM" (Belgian, American, Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,511, issued on May 27, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"MRAM, method of manufacturing the same, and electronic device including the MRAM" was invented by Huilong Zhu (Poughkeepsie, N.Y.), Junjie Li (Beijing) and Chao Zhao (Kessel-lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnet...