US Patent Issued to IMEC vzw, Katholieke Universiteit Leuven on July 1 for "Memory device and method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device" (Belgian Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,475, issued on July 1, was assigned to IMEC vzw (Leuven, Belgium) and Katholieke Universiteit Leuven (Leuyen, Belgium).

"Memory device and method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device" was invented by Woojin Kim (Watermael-Boitsfort, Belgium), Yueh Chang Wu (Heverlee, Belgium), Stefan Cosemans (Leuven, Belgium) and Gouri Sankar Kar (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second re...