US Patent Issued to HangZhou DianZi University, HDU Fuyang Electronic Information Research Institute on Aug. 19 for "High-linearity GaN HEMT radio frequency power device for improving transconductance under large signal" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,199, issued on Aug. 19, was assigned to HangZhou DianZi University (Hangzhou, China) and HDU Fuyang Electronic Information Research Institute Co. Ltd. (Hangzhou, China).

"High-linearity GaN HEMT radio frequency power device for improving transconductance under large signal" was invented by Zhiqun Cheng (Zhejiang, China) and Chao Le (Zhejiang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is provided a high-linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal, including a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer ar...