US Patent Issued to GUANGDONG UNIVERSITY OF TECHNOLOGY on May 27 for "Method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,311,497, issued on May 27, was assigned to GUANGDONG UNIVERSITY OF TECHNOLOGY (Guangzhou, China).

"Method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad" was invented by Jiabin Lu (Guangzhou, China), Da Hu (Guangzhou, China), Zengquan Hu (Guangzhou, China), Wenrui Liang (Guangzhou, China), Zirong Huang (Guangzhou, China) and Haotian Long (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad, including following steps of: attaching a m...