US Patent Issued to GREE ELECTRIC APPLIANCES INC. OF ZHUHAI, EDGELESS SEMICONDUCTOR Co. LTD. OF ZHUHAI on Oct. 21 for "Silicon carbide metal oxide semiconductor field effect transistor and manufacturing method of silicon carbide metal oxide semiconductor field effect transistor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,167, issued on Oct. 21, was assigned to GREE ELECTRIC APPLIANCES INC. OF ZHUHAI (Guangdong, China) and EDGELESS SEMICONDUCTOR Co. LTD. OF ZHUHAI (Guangdong, China).

"Silicon carbide metal oxide semiconductor field effect transistor and manufacturing method of silicon carbide metal oxide semiconductor field effect transistor" was invented by Daokun Chen (Zhuhai, China), Bo Shi (Zhuhai, China), Yiren Lin (Zhuhai, China) and Dan Zeng (Zhuhai, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transisto...