US Patent Issued to KOKUSAI ELECTRIC on July 15 for "Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,314, issued on July 15, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" was invented by Shin Sone (Toyama, Japan), Ryota Horiike (Toyama, Japan) and Hiroki Hatta (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the p...