US Patent Issued to GlobalWafers on Dec. 23 for "Systems and methods for producing a single crystal silicon ingot using a vaporized dopant" (Missouri Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,790, issued on Dec. 23, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Systems and methods for producing a single crystal silicon ingot using a vaporized dopant" was invented by Yu-Chiao Wu (Frontenac, Mo.), William Lynn Luter (St. Charles, Mo.), Richard J. Phillips (St. Peters, Mo.) and James Dean Eoff (Montgomery City, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a single crystal silicon ingot includes adding polycrystalline silicon to a crucible disposed within a chamber defined by a housing of an ingot puller apparatus, maintaining the chamber at a first pressure, heating the chamber using radiant heat to ...