US Patent Issued to GELEST on Aug. 5 for "Inherent area selective deposition of silicon-containing dielectric on metal substrate" (Pennsylvania Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,076, issued on Aug. 5, was assigned to GELEST INC. (Morrisville, Pa.).

"Inherent area selective deposition of silicon-containing dielectric on metal substrate" was invented by Chad Michael Brick (Yardley, Pa.) and Tomoyuki Ogata (Yardley, Pa.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An inherently selective process for the deposition of silicon-containing dielectric layers on metal layers includes atomic layer deposition or chemical vapor deposition utilizing a chemical precursor comprising silicon and sulfur, and an oxidant. An optional buffer layer may be present between the metal layer and the selectively deposited film."

The patent was file...