US Patent Issued to FUJIFILM DIMATIX on Feb. 10 for "Process of epitaxial grown PZT film and method of making a PZT device" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,616, issued on Feb. 10, was assigned to FUJIFILM DIMATIX INC. (Lebanon, N.H.).

"Process of epitaxial grown PZT film and method of making a PZT device" was invented by Youming Li (San Jose, Calif.), Diane Liu (Los Gatos, Calif.) and Darren Imai (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A piezoelectric film stack is created by forming a lower electrode stack on a structured substrate. A pyrochlore lead zirconium titanate (PZT) buffer substrate layer is then formed on the lower electrode stack. A rapid thermal anneal of the PZT buffer substrate layer is then performed. Epitaxial perovskite (100) PZT film on the PZT buffer substr...