US Patent Issued to Fujian Jinhua Integrated Circuit on Aug. 26 for "Method for forming semiconductor device having an air gap between a contact pad and a sidewall of contact hole" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,958, issued on Aug. 26, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Method for forming semiconductor device having an air gap between a contact pad and a sidewall of contact hole" was invented by Yong Woo Hyung (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device and a method for preparing a semiconductor device. The semiconductor device is provided with contact pad structures in contact holes. Each of the contact pad structures is configured to comprise a first contact pad, a second contact pad adaptively covering the first contact pad, and a contact plug located on the...