ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,489, issued on Jan. 20, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Silicon carbide semiconductor device" was invented by Yuichi Hashizume (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes an active region, a first-conductivity-type region, and a termination region. The active region has first second-conductivity-type regions and first silicide films in trenches, second second-conductivity-type regions and a second silicide film between the trenches that are adjacent to one another, and a first electrode while the termination region has a third second-conductivity-type reg...