US Patent Issued to ENKRIS SEMICONDUCTOR on Feb. 10 for "Schottky diode and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,344, issued on Feb. 10, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Schottky diode and manufacturing method thereof" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a Schottky diode and a manufacturing method thereof. The Schottky diode includes a substrate, a first semiconductor layer, a heterostructure layer, a passivation layer, and a cap layer stacked in sequence. The passivation layer includes a first groove and a second groove, and the first groove and the second groove penetrate through at least the passivation layer. A first electrode is arranged at least on the cap layer ...