US Patent Issued to Corporation for National Research Initiatives on May 13 for "Method and system for controlling the state of stress in deposited thin films" (Virginia Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,529, issued on May 13, was assigned to Corporation for National Research Initiatives (Reston, Va.).

"Method and system for controlling the state of stress in deposited thin films" was invented by Michael A. Huff (Oakton, Va.) and Paul Sunal (Arlington, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for controlling the state of stress in deposited thin films are disclosed. According to the method and system, various process parameters, including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step...