US Patent Issued to COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, C.N.R.S., UNIVERSITE GRENOBLE ALPES on June 24 for "Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materials" (French Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,545, issued on June 24, was assigned to COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), C.N.R.S. (Paris) and UNIVERSITE GRENOBLE ALPES (Saint Martin d'Heres, France).

"Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materials" was invented by Maxime Legallais (Grenoble, France), Bassem Salem (Grenoble, France), Thierry Baron (Grenoble, France), Romain Gwoziecki (Grenoble, France) and Marc Plissonnier (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basi...