US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIZUE ET AUX ENERGIES ALTERNATIVES, WEEBIT NANO on July 1 for "Low forming voltage OxRAM memory cell, and associated method of manufacture" (Israeli, French, Italian Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,609, issued on July 1, was assigned to COMMISSARIAT A L'ENERGIE ATOMIZUE ET AUX ENERGIES ALTERNATIVES (Paris) and WEEBIT NANO LTD (Hod-HaSharon, Israel).

"Low forming voltage OxRAM memory cell, and associated method of manufacture" was invented by Gabriel Molas (Grenoble, France), Thomas Magis (Grenoble, France), Jean-Francois Nodin (Grenoble, France), Alessandro Bricalli (Grenoble, France), Guiseppe Piccolboni (Verona, Italy), Yifat Cohen (Kiryat Tivon, Israel) and Amir Regev (Modiin, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends ...