US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on March 25 for "Method of forming the spacers of a transistor gate" (French Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,211, issued on March 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method of forming the spacers of a transistor gate" was invented by Nicolas Posseme (Grenoble, France) and Valentin Bacquie (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming spacers of a gate of a transistor is provided, including: providing an active layer surmounted by a gate; forming a dielectric layer covering the gate and the active layer, the dielectric layer having lateral portions, and basal portions covering the active layer; anisotropically modifying the basal portions by implantation of hyd...