US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on July 15 for "Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory" (French Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,918, issued on July 15, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory" was invented by Laurent Grenouillet (Grenoble, France), Jean Coignus (Grenoble, France) and Elisa Vianello (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for co-manufacturing a FeRAM and an OxRAM includes depositing a layer of first electrode carried out identically for a zone Z1 and a zone Z2; depositing a layer of hafnium dioxide-based active material ...